ELTRON
 


Compact Intelligent Power Modules (IPM)
Type
Usage Method
Collector Current
Ic [A]
Collector-Emitter
Voltage
Vces [V]
Integrated Functions and Operating Parameters
Applications
Catalogue Data
switch
50
600
  • 7 IGBTs in one package
  • silicon transistors with enhanced N channel are used
  • low thermal resistance
  • low saturation voltage VCE(sat) = 1.8 V (typical)
  • the electrodes are isolated from case
  • UL recognized
    		•  high power switching, motor control MIG50J7CSB1W.pdf
    50
    switch
    50
    1200
  • 7 IGBTs in one package
  • silicon transistors with enhanced N channel are used
  • low thermal resistance
  • low saturation voltage VCE(sat) = 1.8 V (typical)
  • the electrodes are isolated from case
  • UL recognized
    		•  high power switching, motor control MIG50Q7CSB1X.pdf
    circuit breaker
    40
    switch
    75
    600
  • 7 IGBTs in one package
  • silicon transistors with enhanced N channel are used
  • low thermal resistance
  • low saturation voltage VCE(sat) = 1.8 V (typical)
  • the electrodes are isolated from case
  • UL recognized
    		•  high power switching, motor control MIG75J7CSB1W.pdf
    circuit breaker
    50
    switch
    75
    1200
  • 7 tranzystorów IGBT w jednej obudowie
  • silicon transistors with enhanced N channel are used
  • low thermal resistance
  • low saturation voltage VCE(sat) = 1.8 V (typical)
  • the electrodes are isolated from case
  • UL recognized
    		•  high power switching, motor control MIG75Q7CSB1X.pdf
    circuit breaker
    40
    switch
    100
    600
  • 7 IGBTs in one package
  • silicon transistors with enhanced N channel are used
  • low thermal resistance
  • low saturation voltage VCE(sat) = 1.9 V (max)
  • the electrodes are isolated from case
  • UL recognized
    		•  high power switching, motor control
    		MIG100J7CSB1W.pdf
    circuit breaker
    30
    MIG100Q7CSB1X
    switch
    100
    1200
  • 6 IGBTs in one package
  • silicon transistors with enhanced N channel are used
  • low thermal resistance
  • low saturation voltage
  • CE(sat) = 2.4 V (max)
  • the electrodes are isolated from case
  • UL recognized
    		•     
    switch
    150
    600
  • 7 IGBTs in one package
  • silicon transistors with enhanced N channel are used
  • low thermal resistance
  • low saturation voltage VCE(sat) = 1.7 V (max)
  • the electrodes are isolated from case
  • UL recognized
    		•  high power switching, motor control MIG150J7CSB1W.pdf
    circuit breaker
    75
    MIG150Q7CSB1X
    switch
    150
    1200
  • 6 IGBTs in one package
  • silicon transistors with enhanced N channel are used
  • low thermal resistance
  • low saturation voltage VCE(sat) = 2.4 V (max)
  • the electrodes are isolated from case
  • UL recognized
    		•  high power switching, motor control MIG150Q7CSB1X.pdf
    MIG200J6CMB1W
    switch
    200
    600
  • 6 IGBTs in one package
  • silicon transistors with enhanced N channel are used
  • low thermal resistance
  • low saturation voltage VCE(sat) = 2.0 V (max)
  • the electrodes are isolated from case
  • UL recognized
    		•  high power switching, motor control MIG200J6CMB1W.pdf
    MIG200Q2CSB1X
    switch
    200
    1200
  • 2 IGBTs in one package
  • silicon transistors with enhanced N channel are used
  • low thermal resistance
  • low saturation voltage VCE(sat) = 2.0 V (max)
  • the electrodes are isolated from case
  • UL recognized
    		•  high power switching, motor control MIG200Q2CSB1X.pdf
    MIG300J2CSB1W
    switch
    300
    600
  • 2 IGBTs in one package
  • silicon transistors with enhanced N channel are used
  • low thermal resistance
  • low saturation voltage VCE(sat) = 1.9 V (max)
  • the electrodes are isolated from case
  • UL recognized
    		•  high power switching, motor control MIG300J2CSB1W.pdf
    MIG300Q2CMB1X
    switch
    300
    1200
  • 2 IGBTs in one package
  • silicon transistors with enhanced N channel are used
  • low thermal resistance
  • low saturation voltage VCE(sat) = 1.9 V (max)
  • the electrodes are isolated from case
  • UL recognized
    		•  high power switching, motor control MIG300Q2CMB1X.pdf
    MIG400J2CSB1W
    switch
    400
    600
  • 2 IGBTs in one package
  • silicon transistors with enhanced N channel are used
  • low thermal resistance
  • low saturation voltage VCE(sat) = 1.9 V (max)
  • the electrodes are isolated from case
  • UL recognized
    		•  high power switching, motor control MIG400J2CSB1W.pdf
    MIG400Q2CMB1X
    switch
    400
    1200
  • 2 IGBTs in one package
  • silicon transistors with enhanced N channel are used
  • low thermal resistance
  • low saturation voltage VCE(sat) = 2.4 V (max)
  • the electrodes are isolated from case
  • UL recognized
    		•  high power switching, motor control MIG400Q2CMB1X.pdf
    MIG600J2CMB1W
    switch
    600
    600
  • 2 IGBTs in one package
  • silicon transistors with enhanced N channel are used
  • low thermal resistance
  • low saturation voltage VCE(sat) = 2.1 V (max)
  • the electrodes are isolated from case
  • UL recognized
    		•  high power switching, motor control MIG600J2CMB1W.pdf