| Type |
Collector Current
Ic [A] |
Collector-Emitter
Voltage
Vces [V] |
Operating Parameters |
Applications |
Catalogue Data
 |
| MP6750 |
10 |
600 |
6 IGBTs in one package
silicon transistors with enhanced N channel are used
the electrodes are isolated from case
low saturation voltage
high switching speed
|
high power switching, motor control |
|
| MP6750 |
15 |
600 |
6 IGBTs in one package
silicon transistors with enhanced N channel are used
the electrodes are isolated from case
low saturation voltage
high switching speed |
high power switching, motor control
|
|
| MP6752 |
20 |
600 |
6 IGBTs in one package
silicon transistors with enhanced N channel are used
the electrodes are isolated from case
low saturation voltage
high switching speed |
high power switching, motor control |
|
| MP6757 |
25 |
600 |
6 IGBTs in one package
silicon transistors with enhanced N channel are used
the electrodes are isolated from case
low saturation voltage
high switching speed |
high power switching, motor control
|
|
