| Type |
Collector Current
Ic [A] |
Collector-Emitter
Voltage
Vces [V] |
Operating Parameters |
Applications |
Catalogue Data
 |
| MG50J2YS50 |
50 |
600 |
6 IGBTs in one package
silicon transistors with enhanced N channel are used
high switching speed
low saturation voltage VCE(sat) = 2.7 V (max)
the electrodes are isolated from case |
high power switching, motor control |
MG50J2YS50.pdf |
| MG50J6ES50 |
50 |
600 |
6 IGBTs in one package
silicon transistors with enhanced N channel are used
high switching speed
low saturation voltage VCE(sat) = 2.7 V (max)
the electrodes are isolated from case |
high power switching, motor control
|
MG50J6ES50.pdf |
| MG75J2YS50 |
75 |
600 |
6 IGBTs in one package
silicon transistors with enhanced N channel are used
high switching speed
low saturation voltage VCE(sat) = 2.7 V (max)
the electrodes are isolated from case |
high power switching, motor control |
MG75J2YS50.pdf |
| MG75J6ES50 |
75 |
600 |
6 IGBTs in one package
silicon transistors with enhanced N channel are used
high switching speed
low saturation voltage VCE(sat) = 2.7 V (max)
the electrodes are isolated from case |
high power switching, motor control
|
MG75J6ES50.pdf |
| MG150J2YS50 |
150 |
600 |
6 IGBTs in one package
silicon transistors with enhanced N channel are used
high switching speed
low saturation voltage VCE(sat) = 2.7 V (max)
the electrodes are isolated from case |
high power switching, motor control |
MG150J2YS50.pdf |
| MG200J2YS50 |
200 |
600 |
6 IGBTs in one package
silicon transistors with enhanced N channel are used
high input impedance
high switching speed
low saturation voltage VCE(sat) = 2.7 V (max)
the electrodes are isolated from case |
high power switching, motor control
|
MG200J2YS50.pdf |
| MG300J2YS50 |
300 |
600 |
6 IGBTs in one package
silicon transistors with enhanced N channel are used
high switching speed
low saturation voltage VCE(sat) = 2.7 V (max)
the electrodes are isolated from case |
high power switching, motor control |
MG300J2YS50.pdf |
| MG300J1US51 |
300 |
600 |
6 IGBTs in one package
silicon transistors with enhanced N channel are used
high input impedance
high switching speed
low saturation voltage VCE(sat) = 2.7 V (max)
the electrodes are isolated from case |
high power switching, motor control
|
MG300J1US51.pdf |
| MG400J1US51 |
400 |
600 |
6 IGBTs in one package
silicon transistors with enhanced N channel are used
high input impedance
high switching speed
low saturation voltage VCE(sat) = 2.7 V (max)
the electrodes are isolated from case
|
high power switching, motor control |
MG400J1US51.pdf |
