ELTRON
 


IGBT Modules
2nd generation (enhanced)

Type
Collector Current
Ic [A]
Collector-Emitter
Voltage
Vces [V]
Operating Parameters
Applications
Catalogue Data
MG8Q6ES42
8
1200
  • 6 IGBTs in one package
  • silicon transistors with enhanced N channel are used
  • high switching speed
  • low saturation voltage VCE(sat) = 4.0V (max)
  • the electrodes are isolated from case
    		•  high power switching, motor control
    MG8Q6ES42.pdf
    MG15J6ES40
    15
    600
  • 6 IGBTs in one package
  • silicon transistors with enhanced N channel are used
  • high switching speed
  • low saturation voltage VCE(sat) = 3.5 V (max)
  • the electrodes are isolated from case
    		•  high power switching, motor control
    MG15J6ES40.pdf
    MG15Q6ES42
    15
    1200
  • 6 IGBTs in one package
  • silicon transistors with enhanced N channel are used
  • high switching speed
  • low saturation voltage VCE(sat) = 4.0V (max)
  • the electrodes are isolated from case
    		•  high power switching, motor control
    MG15Q6ES42.pdf
    MG25J6ES40
    25
    600
  • 6 IGBTs in one package
  • silicon transistors with enhanced N channel are used
  • high switching speed
  • low saturation voltage VCE(sat) = 3.5 V (max)
  • the electrodes are isolated from case
    		•  high power switching, motor control
    MG25J6ES40.pdf
    MG25J6ES42
    25
    600
  • 6 IGBTs in one package
  • silicon transistors with enhanced N channel are used
  • high switching speed
  • low saturation voltage VCE(sat) = 3.5 V (max)
  • the electrodes are isolated from case
    		•  high power switching, motor control
    MG25J6ES42.pdf
    MG25Q2YS40
    25
    1200
  • 6 IGBTs in one package
  • silicon transistors with enhanced N channel are used
  • high input impedance
  • high switching speed
  • low saturation voltage VCE(sat) = 3.5 V (max)
  • the electrodes are isolated from case
    		•  high power switching, motor control MG25Q2YS40.pdf
    MG25Q6ES42
    25
    1200
  • 6 IGBTs in one package
  • silicon transistors with enhanced N channel are used
  • high switching speed
  • low saturation voltage VCE(sat) = 4.0 V (max)
  • the electrodes are isolated from case
    		•  high power switching, motor control
    MG25Q6ES42.pdf
    MG50Q2YS40
    50
    1200
  • 6 IGBTs in one package
  • silicon transistors with enhanced N channel are used
  • high input impedance
  • high switching speed
  • low saturation voltage VCE(sat) = 4.0 V (max)
  • the electrodes are isolated from case
    		•  high power switching, motor control MG50Q2YS40.pdf
    MG50Q6ES40
    50
    1200
  • 6 IGBTs in one package
  • silicon transistors with enhanced N channel are used
  • high input impedance
  • high switching speed
  • low saturation voltage VCE(sat) = 4.0 V (max)
  • the electrodes are isolated from case
    		•  high power switching, motor control
    MG50Q6ES40.pdf
    MG75Q6ES40
    75
    1200
  • 6 IGBTs in one package
  • silicon transistors with enhanced N channel are used
  • high input impedance
  • high switching speed
  • low saturation voltage VCE(sat) = 4.0 V (max)
  • the electrodes are isolated from case
    		•  high power switching, motor control MG75Q6ES40.pdf
    MG100Q2YS42
    100
    1200
  • 6 IGBTs in one package
  • silicon transistors with enhanced N channel are used
  • high input impedance
  • high switching speed
  • low saturation voltage VCE(sat) = 4.0 V (max)
  • the electrodes are isolated from case
    		•  high power switching, motor control
    MG100Q2YS42.pdf
    MG200Q1US41
    200
    1200
  • 6 IGBTs in one package
  • silicon transistors with enhanced N channel are used
  • high input impedance
  • high switching speed
  • low saturation voltage VCE(sat) = 4.0 V (max)
  • the electrodes are isolated from case
    		•  high power switching, motor control MG200Q1US41.pdf
    MG200Q2YS40
    200
    1200
  • 6 IGBTs in one package
  • silicon transistors with enhanced N channel are used
  • high input impedance
  • high switching speed
  • low saturation voltage VCE(sat) = 4.0 V (max)
  • the electrodes are isolated from case
    		•  high power switching, motor control
    MG200Q2YS40.pdf
    MG300Q1US41
    300
    1200
  • 6 IGBTs in one package
  • silicon transistors with enhanced N channel are used
  • high input impedance
  • high switching speed
  • low saturation voltage VCE(sat) = 4.0 V (max)
  • the electrodes are isolated from case
    		•  high power switching, motor control MG300Q1US41.pdf
    MG400Q1US41
    400
    1200
  • 6 IGBTs in one package
  • silicon transistors with enhanced N channel are used
  • high input impedance
  • high switching speed
  • low saturation voltage VCE(sat) = 4.0 V (max)
  • the electrodes are isolated from case
    		•  high power switching, motor control
    MG400Q1US41.pdf