| Type |
Collector Current
Ic [A] |
Collector-Emitter
Voltage
Vces [V] |
Operating Parameters |
Applications |
Catalogue Data
 |
| MG50Q2YS50 |
78 |
1200 |
2 IGBTs in one package
silicon transistors with enhanced N channel are used
high input impedance
high switching speed tf= 0.3 µs (max)
low saturation voltage VCE(sat) = 3.6 V (max)
the electrodes are isolated from case |
high power switching, motor control |
|
| MG752YS50 |
100 |
1200 |
2 IGBTs in one package
silicon transistors with enhanced N channel are used
high input impedance
high switching speed tf= 0.3 µs (max)
low saturation voltage VCE(sat) = 3.6 V (max)
the electrodes are isolated from case |
high power switching, motor control
|
|
| MG100Q2YS50 |
150 |
1200 |
2 IGBTs in one package
silicon transistors with enhanced N channel are used
high input impedance
high switching speed tf= 0.3 µs (max)
low saturation voltage VCE(sat) = 3.6 V (max)
the electrodes are isolated from case |
high power switching, motor control |
|
| MG100Q2YS51 |
150 |
1200 |
2 IGBTs in one package
silicon transistors with enhanced N channel are used
high input impedance
high switching speed tf= 0.3 µs (max)
low saturation voltage VCE(sat) = 3.6 V (max)
the electrodes are isolated from case |
high power switching, motor control
|
|
| MG150Q2YS50 |
200 |
1200 |
2 IGBTs in one package
silicon transistors with enhanced N channel are used
high input impedance
high switching speed tf= 0.3 µs (max)
low saturation voltage VCE(sat) = 3.6 V (max)
the electrodes are isolated from case |
high power switching, motor control |
|
| MG150Q2YS51 |
200 |
1200 |
2 IGBTs in one package
silicon transistors with enhanced N channel are used
high input impedance
high switching speed tf= 0.3 µs (max)
low saturation voltage VCE(sat) = 3.6 V (max)
the electrodes are isolated from case |
high power switching, motor control
|
|
| MG200Q1US51 |
300 |
1200 |
2 IGBTs in one package
silicon transistors with enhanced N channel are used
high input impedance
high switching speed tf= 0.3 µs (max)
low saturation voltage VCE(sat) = 3.6 V (max)
the electrodes are isolated from case |
high power switching, motor control |
|
| MG200Q2YS50 |
300 |
1200 |
2 IGBTs in one package
silicon transistors with enhanced N channel are used
high input impedance
high switching speed tf= 0.3 µs (max)
low saturation voltage VCE(sat) = 3.6 V (max)
the electrodes are isolated from case |
high power switching, motor control
|
|
| MG300Q1US51 |
400 |
1200 |
2 IGBTs in one package
silicon transistors with enhanced N channel are used
high input impedance
high switching speed tf= 0.3 µs (max)
low saturation voltage VCE(sat) = 3.6 V (max)
the electrodes are isolated from case |
high power switching, motor control |
|
| MG300Q2YS50 |
400 |
1200 |
2 IGBTs in one package
silicon transistors with enhanced N channel are used
high input impedance
high switching speed tf= 0.3 µs (max)
low saturation voltage VCE(sat) = 3.6 V (max)
the electrodes are isolated from case |
high power switching, motor control
|
|
| MG400Q1US51 |
520 |
1200 |
2 IGBTs in one package
silicon transistors with enhanced N channel are used
high input impedance
high switching speed tf= 0.3 µs (max)
low saturation voltage VCE(sat) = 3.6 V (max)
the electrodes are isolated from case |
high power switching, motor control |
|
| MG600Q1US51 |
600 |
1200 |
2 IGBTs in one package
silicon transistors with enhanced N channel are used
high input impedance
high switching speed tf= 0.3 µs (max)
low saturation voltage VCE(sat) = 3.6 V (max)
the electrodes are isolated from case |
high power switching, motor control
|
|
