ELTRON - Semikron - Struktury półprzewodnikowe

Semiconductor Structures / Chips

Freewheeling Diodes

Type	Operating Voltage V_RRM V	Forward Current I_F T_s=80°C T_vj=150°C A	Forward Voltage V_F T_vj=25°C V	Forward Current I_F T_vj=25°C A	Recovered Charge Q_RR T_vj=125°C µC	Surge Forward Current I_FSM T_vj=150°C 10 ms A
CAL Fast
600 V
SKCD 06 C 060 I3	600	15	1.35	10	0.7	-
SKCD 09 C 060 I3	600	20	1.35	15	1.2	100
SKCD 18 C 060 I3	600	30	1.35	25	2.5	200
SKCD 31 C 060 I3	600	50	1.35	50	3.3	440
SKCD 47 C 060 I3	600	80	1.35	85	5.5	720
SKCD 61 C 060 I3	600	100	1.35	110	7	1000
SKCD 81 C 060 I3	600	150	1.35	155	8.5	1260
SKCD 121 C 060 I3	600	210	1.35	245	10.7	2100
1200 V
SKCD 06 C 120 I3	1200	10	2	5	-	-
SKCD 11 C 120 I3	1200	15	2	10	-	-
SKCD 18 C 120 I3	1200	25	2	15	2.7	180
SKCD 23 C 120 I3	1200	30	2	25	3.7	250
SKCD 31 C 120 I3	1200	40	2	35	4.5	350
SKCD 47 C 120 I3	1200	55	2	55	8	550
SKCD 61 C 120 I3	1200	75	2	70	11	720
SKCD 81 C 120 I3	1200	100	2	100	15	900
SKCD 121 C 120 I3	1200	150	2	155	-	-
1700 V
SKCD 47 C 170 I	1700	55	2.05	55	15	550
SKCD 61 C 170 I	1700	75	2.05	75	19	720
CAL High Density
600 V
SKCD 04 C 060 I HD	600	10	1.35	7	0.89	-
SKCD 06 C 060 I HD	600	20	1.35	12	0.93	95
SKCD 16 C 060 I HD	600	50	1.35	37	5.64	320
SKCD 24 C 060 I HD	600	75	1.35	60	7.8	395
SKCD 42 C 060 I HD	600	100	1.35	110	14	810
SKCD 61 C 060 I HD	600	150	1.35	160	22	1080
SKCD 81 C 060 I HD	600	200	1.35	230	32	1310
1200 V
SKCD 06 C 120 I HD	1200	12	1.5	5	1.4	55
SKCD 11 C 120 I HD	1200	20	1.5	12	3.3	125
SKCD 14 C 120 I HD	1200	25	1.5	15	4.2	170
SKCD 18 C 120 I HD	1200	28	1.5	20	5	200
SKCD 31 C 120 I HD	1200	45	1.5	45	10	480
SKCD 47 C 120 I HD	1200	70	1.5	70	12	640
SKCD 61 C 120 I HD	1200	90	1.5	90	18	900
SKCD 81 C 120 I HD	1200	120	1.5	130	23	1100
1700 V
SKCD 47 C 170 I HD	1700	75	1.73	75	19	650
SKCD 61 C 170 I HD	1700	100	1.73	100	26	710
SKCD 81 C 170 I HD	1700	150	1.73	150	44	1070

Rectifiers

Type	Operating Voltage V_RRM V	Forward Current I_F(DC) T_s=80°C T_vj=150°C A	Surge Forward Current I_FSM T_vj=150°C 10 ms A	I²t T_vj=150°C 10 ms A²t	Reverse Recovery Time t_rr T_vj=25°C µs
Square
1600 V
SKR Tabl. 3.5 Qu	1600	25	-	-	-
SKR Tabl. 4.2 Qu	1600	35	270	360	9
SKR Tabl. 5.6 Qu	1600	50	450	1020	10
SKR Tabl. 6.2 Qu	1600	65	-	-	10
SKR Tabl. 7.0 Qu	1600	75	-	-	11
SKR Tabl. 8.9 Qu	1600	140	1380	9520	12
SKR Tabl. 10.3 Qu	1600	170	-	-	14
SKR Tabl. 12.4 Qu	1600	235	-	-	14
SKR Tabl. 15.2 Qu	1600	330	-	-	14
SKR Tabl. 18.2 Qu	1600	380	5000	-	16

Thyristors

Type	Operating Voltage V_RRM V	Forward Current I_T(DC) T_c=80°C T_vj=130°C A	Surge On-State Current I_TSM T_vj=130°C 10 ms A	I²t T_vj=130°C 10 ms A²t	Circuit Commutated Turn Off Time t_q T_vj=130°C µs	Gate Trigger Current I_GT T_vj=25°C mA	Gate Trigger Voltage V_GT T_vj=25°C V
Square
Corner gate
SKT Tabl. 5.6 Qu RG bond.	1600	60	340	575	150	100	1.98
SKT Tabl. 7.0 Qu RG bond.	1600	75	450	1012	150	100	1.98
SKT Tabl.7.0 Qu RG sold.	1600	75	450	1012	150	100	1.98
SKT Tabl. 8.9 Qu RG bond.	1600	105	1000	5000	150	100	1.98
SKT Tabl. 8.9 Qu RG sold.	1600	105	1000	5000	150	100	1.98
SKT Tabl. 10.3 Qu RG bond.	1600	125	1250	7810	150	100	1.98
SKT Tabl. 10.3 Qu RG sold.	1600	125	1250	7810	150	100	1.98
SKT Tabl. 12.4 Qu RG bond.	1600	165	1800	16200	150	100	1.98
SKT Tabl. 12.4 Qu RG sold.	1600	165	1800	16200	150	100	1.98
Central Gate
SKT Tabl. 7.5 Qu ZG bond	1600	80	450	1012	150	100	1.98
SKT Tabl. 7.5 Qu ZG sold.	1600	80	450	1012	150	100	1.98
SKT Tabl. 8.9 Qu ZG bond.	1600	105	1000	5000	150	100	1.98
SKT Tabl. 8.9 Qu ZG sold.	1600	105	1000	5000	150	100	1.98
SKT Tabl. 10.3 Qu ZG bond.	1600	125	1250	7810	150	100	1.98
SKT Tabl. 10.3 Qu ZG sold.	1600	125	1250	7810	150	100	1.98
SKT Tabl. 12.4 Qu ZG sold.	1600	165	1800	16200	150	100	1.98
SKT Tabl. 12.4 Qu ZGH sold.	2000	165	-	-	-	100	1.98
SKT Tabl. 15.2 Qu ZG bond.	1600	215	3200	51200	150	100	1.98
SKT Tabl. 18.2 Qu ZG bond.	1600	250	5000	125000	150	100	1.98