| Circuit's Operating Current
I(A) = 50A |
| |
|
Integrated Functions and Operating Parameters |
|
| |
|
- 4th-generation IGBT modules are used, with path width of
1µm
- New type of built-in diode (smoothened reverse recovery characteristic)
to protect the transistor (separately for each transistor contained in the IGBT module)
- Temperature control system (measurement directly on the IGBT chip)
- Integrated monolithic IGBT transistor gate control system
- Different types of protection (overvoltage, temperature, overload)
- Flat insulated case, pin outputs
|
Noise level for 3.7 kW loads in servo-mechanisms, motor control systems
|
| |
|
- 4th-generation IGBT modules are used, with path width of
1µm
- New type of built-in diode (smoothened reverse recovery characteristic)
to protect the transistor
(separately for each transistor contained in the IGBT module)
- Temperature control system (measurement directly on the IGBT chip)
- Integrated monolithic IGBT transistor gate control system
- Different types of protection (overvoltage, temperature, overload)
- Flat insulated case, pin outputs
+ screw terminals (according to the 3rd generation terminals standard, S Series)
|
Noise level for 3.7 kW loads in
servo-mechanisms and standard inverters, motor control systems
|
| |
|
- 4th-generation IGBT modules are used, with path width of
1µm
- New type of built-in diode (smoothened reverse recovery characteristic)
to protect the transistor
(separately for each transistor contained in the IGBT module)
- Temperature control system (measurement directly on the IGBT chip)
- Integrated monolithic IGBT transistor gate control system
- Different types of protection (overvoltage, temperature, overload)
- Flat insulated case, pin outputs
and screw terminals (according to the 3rd generation terminals standard, S Series)
|
Noise level for 11 kW loads in
servo-mechanisms and standard inverters; motor control systems |
| |
|
- 4th-generation IGBT modules are used, with path width of
1µm
- New type of built-in diode (smoothened reverse recovery characteristic)
to protect the transistor
(separately for each transistor contained in the IGBT module)
- Temperature control system (measurement directly on the IGBT chip)
- Integrated monolithic IGBT transistor gate control system
- Different types of protection (overvoltage, temperature, overload)
- Flat insulated case, pin outputs
and screw terminals (according to the 3rd generation terminals standard, S Series)
|
Noise level for 18.5/
22.5 kW loads in servo-mechanisms and standard inverters; motor control systems
|
| Circuit's Operating Current
I(A) = 75A |
| |
|
Integrated Functions and Operating Parameters |
|
| |
|
- 4th-generation IGBT modules are used, with path width of
1µm
- New type of built-in diode (smoothened reverse recovery characteristic)
to protect the transistor
(separately for each transistor contained in the IGBT module)
- Temperature control system (measurement directly on the IGBT chip)
- Integrated monolithic IGBT transistor gate control system
- Different types of protection (overvoltage, temperature, overload)
- Flat insulated case, pin outputs
|
Noise level for 5.5/ 7.5 kW loads in servo-mechanisms, motor control systems
|
| |
|
- 4th-generation IGBT modules are used, with path width of
1µm
- New type of built-in diode (smoothened reverse recovery characteristic)
to protect the transistor
(separately for each transistor contained in the IGBT module)
- Temperature control system (measurement directly on the IGBT chip)
- Integrated monolithic IGBT transistor gate control system
- Different types of protection (overvoltage, temperature, overload)
- Flat insulated case, pin outputs
and screw terminals (according to the 3rd generation terminals standard, S Series)
|
Noise level for 5.5/ 7.5 kW loads in
servo-mechanisms and standard inverters; motor control systems
|
| |
|
- 4th-generation IGBT modules are used, with path width of
1µm
- New type of built-in diode (smoothened reverse recovery characteristic)
to protect the transistor
(separately for each transistor contained in the IGBT module)
- Temperature control system (measurement directly on the IGBT chip)
- Integrated monolithic IGBT transistor gate control system
- Different types of protection (overvoltage, temperature, overload)
- Flat insulated case, pin outputs
and screw terminals (according to the 3rd generation terminals standard, S Series)
|
Noise level for 5.5/
7.5 kW loads in servo-mechanisms and standard inverters; motor control systems
|
| Circuit's Operating Current
I(A) = 100 A |
| |
|
Integrated Functions and Operating Parameters |
|
| |
|
- 4th-generation IGBT modules are used, with path width of
1µm
- New type of built-in diode (smoothened reverse recovery characteristic)
to protect the transistor
(separately for each transistor contained in the IGBT module)
- Temperature control system (measurement directly on the IGBT chip)
- Integrated monolithic IGBT transistor gate control system
- Different types of protection (overvoltage, temperature, overload)
- Flat insulated case, pin outputs
|
Noise level for 11 kW loads in servo-mechanisms, motor control systems
|
| |
|
- 4th-generation IGBT modules are used, with path width of
1µm
- New type of built-in diode (smoothened reverse recovery characteristic)
to protect the transistor
(separately for each transistor contained in the IGBT module)
- Temperature control system (measurement directly on the IGBT chip)
- Integrated monolithic IGBT transistor gate control system
- Different types of protection (overvoltage, temperature, overload)
- Flat insulated case, pin outputs
and screw terminals (according to the 3rd generation terminals standard, S Series)
|
Noise level for 11 kW loads in
servo-mechanisms and standard inverters; motor control systems
|
| PM100RSD060 |
600 |
- 4th-generation IGBT modules are used, with path width of
1µm
- New type of built-in diode (smoothened reverse recovery characteristic)
to protect the transistor
(separately for each transistor contained in the IGBT module)
- Temperature control system (measurement directly on the IGBT chip)
- Integrated monolithic IGBT transistor gate control system
- Different types of protection (overvoltage, temperature, overload)temperaturowe,
przeciążeniowe)
- Flat insulated case, pin outputs+
screw terminals (according to the 3rd generation terminals standard, S Series)
|
Noise level for 11 kW loads in
servo-mechanisms and standard inverters; motor control systems
|
| PM100RSD060 |
600 |
- 4th-generation IGBT modules are used, with path width of
1µm
- New type of built-in diode (smoothened reverse recovery characteristic)
to protect the transistor
(separately for each transistor contained in the IGBT module)
- Temperature control system (measurement directly on the IGBT chip)
- Integrated monolithic IGBT transistor gate control system
- Different types of protection (overvoltage, temperature, overload)temperaturowe,
przeciążeniowe)
- Flat insulated case, pin outputs+
screw terminals (according to the 3rd generation terminals standard, S Series)
|
Noise level for
11 kW loads in servo-mechanisms and standard inverters; motor control systems
|
| |
|
- 4th-generation IGBT modules are used, with path width of
1µm
- New type of built-in diode (smoothened reverse recovery characteristic)
to protect the transistor
(separately for each transistor contained in the IGBT module)
- Temperature control system (measurement directly on the IGBT chip)
- Integrated monolithic IGBT transistor gate control system
- Different types of protection (overvoltage, temperature, overload)
- Flat insulated case, pin outputs
and screw terminals (according to the 3rd generation terminals standard, S Series)
|
Noise level for 18.5/
22 kW loads in servo-mechanisms and standard inverters; motor control systems
|
| Circuit's Operating Current
I(A) = 150 A |
| |
|
Integrated Functions and Operating Parameters |
|
| |
|
- 4th-generation IGBT modules are used, with path width of
1µm
- New type of built-in diode (smoothened reverse recovery characteristic)
to protect the transistor
(separately for each transistor contained in the IGBT module)
- Temperature control system (measurement directly on the IGBT chip)
- Integrated monolithic IGBT transistor gate control system
- Different types of protection (overvoltage, temperature, overload)
- Flat insulated case, pin outputs
|
Noise level for 15 kW loads in servo-mechanisms, motor control systems
|
| |
|
- 4th-generation IGBT modules are used, with path width of
1µm
- New type of built-in diode (smoothened reverse recovery characteristic)
to protect the transistor
(separately for each transistor contained in the IGBT module)
- Temperature control system (measurement directly on the IGBT chip)
- Integrated monolithic IGBT transistor gate control system
- Different types of protection (overvoltage, temperature, overload)
- Flat insulated case, pin outputs
and screw terminals (according to the 3rd generation terminals standard, S Series)
|
Noise level for 15/ 18.5 kW loads in
servo-mechanisms and standard inverters; motor control systems
|
| |
|
- 4th-generation IGBT modules are used, with path width of
1µm
- New type of built-in diode (smoothened reverse recovery characteristic)
to protect the transistor
(separately for each transistor contained in the IGBT module)
- Temperature control system (measurement directly on the IGBT chip)
- Integrated monolithic IGBT transistor gate control system
- Different types of protection (overvoltage, temperature, overload)
- Flat insulated case, pin outputs
and screw terminals (according to the 3rd generation terminals standard, S Series)
|
Noise level for 15/
18.5 kW loads in servo-mechanisms and standard inverters; motor control systems
|
| |
|
- 4th-generation IGBT modules are used, with path width of
1µm
- New type of built-in diode (smoothened reverse recovery characteristic)
to protect the transistor
(separately for each transistor contained in the IGBT module)
- Temperature control system (measurement directly on the IGBT chip)
- Integrated monolithic IGBT transistor gate control system
- Different types of protection (overvoltage, temperature, overload)
- Flat insulated case, pin outputs
and screw terminals (according to the 3rd generation terminals standard, S Series)
|
Noise level for 30 kW loads
in servo-mechanisms and standard inverters; motor control systems |
| Circuit's Operating Current
I(A) = 200 A |
| |
|
Integrated Functions and Operating Parameters |
|
| |
|
- 4th-generation IGBT modules are used, with path width of
1µm
- New type of built-in diode (smoothened reverse recovery characteristic)
to protect the transistor
(separately for each transistor contained in the IGBT module)
- Temperature control system (measurement directly on the IGBT chip)
- Integrated monolithic IGBT transistor gate control system
- Different types of protection (overvoltage, temperature, overload)
- Flat insulated case, pin outputs
|
Noise level for 18.5/ 22 kW loads in servo-mechanisms, motor control systems
|
| |
|
- 4th-generation IGBT modules are used, with path width of
1µm
- New type of built-in diode (smoothened reverse recovery characteristic)
to protect the transistor
(separately for each transistor contained in the IGBT module)
- Temperature control system (measurement directly on the IGBT chip)
- Integrated monolithic IGBT transistor gate control system
- Different types of protection (overvoltage, temperature, overload)
- Flat insulated case, pin outputs
and screw terminals (according to the 3rd generation terminals standard, S Series)
|
Noise level for 22 kW loads in
servo-mechanisms and standard inverters; motor control systems
|
| |
|
- 4th-generation IGBT modules are used, with path width of
1µm
- New type of built-in diode (smoothened reverse recovery characteristic)
to protect the transistor
(separately for each transistor contained in the IGBT module)
- Temperature control system (measurement directly on the IGBT chip)
- Integrated monolithic IGBT transistor gate control system
- Different types of protection (overvoltage, temperature, overload)
- Flat insulated case, pin outputs
and screw terminals (according to the 3rd generation terminals standard, S Series)
|
Noise level for 15/
18.5 kW loads in servo-mechanisms and standard inverters; motor control systems
|
| Circuit's Operating Current
I(A) = 300 A |
| |
|
Integrated Functions and Operating Parameters |
|
| |
|
- 4th-generation IGBT modules are used, with path width of
1µm
- New type of built-in diode (smoothened reverse recovery characteristic)
to protect the transistor
(separately for each transistor contained in the IGBT module)
- Temperature control system (measurement directly on the IGBT chip)
- Integrated monolithic IGBT transistor gate control system
- Different types of protection (overvoltage, temperature, overload)
- Flat insulated case, pin outputs
|
Noise level for 30 kW loads in servo-mechanisms, motor control systems
|
| |
|
- 4th-generation IGBT modules are used, with path width of
1µm
- New type of built-in diode (smoothened reverse recovery characteristic)
to protect the transistor
(separately for each transistor contained in the IGBT module)
- Temperature control system (measurement directly on the IGBT chip)
- Integrated monolithic IGBT transistor gate control system
- Different types of protection (overvoltage, temperature, overload)
- Flat insulated case, pin outputs
and screw terminals (according to the 3rd generation terminals standard, S Series)
|
Noise level for 30 kW loads in
servo-mechanisms and standard inverters; motor control systems
|
| |
|
- 4th-generation IGBT modules are used, with path width of
1µm
- New type of built-in diode (smoothened reverse recovery characteristic)
to protect the transistor
(separately for each transistor contained in the IGBT module)
- Temperature control system (measurement directly on the IGBT chip)
- Integrated monolithic IGBT transistor gate control system
- Different types of protection (overvoltage, temperature, overload)
- Flat insulated case, pin outputs
and screw terminals (according to the 3rd generation terminals standard, S Series)
|
Noise level for 30 kW loads in
servo-mechanisms and standard inverters; motor control systems
|
